Resumen:
Phase Change Memory (PCM) is currently postulated as the best alternative for replacing Dynamic Random Access Memory (DRAM) as the technology used for implementing main memories, thanks to its significant advantages such as good scalability and low leakage. However, PCM also presents some drawbacks compared to DRAM, like its lower endurance. This work presents a behavior analysis of conventional cache replacement policies in terms of the amount of writes to main memory. Besides, new last level cache (LLC) replacement algorithms are exposed, aimed at reducing the number of writes to PCM and hence increasing its lifetime, without significantly degrading system performance.
